mje200 npn MJE210 pnp complementary silicon power transistors description: the central semiconductor mje200, MJE210 types are complementary silicon transistors designed for high gain amplifier applications. marking: full part number maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 40 v collector-emitter voltage v ceo 25 v emitter-base voltage v ebo 8.0 v continuous collector current i c 5.0 a peak collector current i cm 10 a continuous base current i b 1.0 a power dissipation p d 1.5 w power dissipation (t c =25c) p d 15 w operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 83.4 c/w thermal resistance jc 8.34 c/w electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min max units i cbo v cb =40v 100 na i cbo v cb =40v, t j =125c 100 a i ebo v eb =8.0v 100 na bv ceo i c =10ma 25 v v ce(sat) i c =500ma, i b =50ma 0.3 v v ce(sat) i c =2.0a, i b =200ma 0.75 v v ce(sat) i c =5.0a, i b =1.0a 1.8 v v be(sat) i c =5.0a, i b =1.0a 2.5 v v be(on) v ce =1.0v, i c =2.0a 1.6 v h fe v ce =1.0v, i c =500ma 70 h fe v ce =1.0v, i c =2.0a 45 180 h fe v ce =2.0v, i c =5.0a 10 f t v ce =10v, i c =100ma, f=10mhz 65 mhz c ob v cb =10v, i e =0, f=100khz (mje200) 80 pf c ob v cb =10v, i e =0, f=100khz (MJE210) 120 pf to-126 case r1 (2-may 2012) www.centralsemi.com
mje200 npn MJE210 pnp complementary silicon power transistors lead code: 1) emitter 2) collector 3) base marking: full part number to-126 case - mechanical outline www.centralsemi.com r1 (2-may 2012)
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